ES2LDHR5G

ES2LDHR5G

Images are for reference only
See Product Specifications

ES2LDHR5G
Описание:
DIODE GEN PURP 200V 2A DO214AA
Упаковка:
Tape & Reel (TR)
Datasheet:
ES2LDHR5G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:ES2LDHR5G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):5f5468d54f2b86e7e60fac196581d7d0
Voltage - Forward (Vf) (Max) @ If:021b6d41400719c65d1e43cf1c736140
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:b74ef6fb4de700e3379a952a2fb629b3
Capacitance @ Vr, F:a57806ff7c07347f7b063fff8bb8613e
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:38894d8db4510f24855cf840455e79c1
Supplier Device Package:72e4d1a9d43a02dd516a7a09297fded3
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
S1DLWHRVG
S1DLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
1N4150
1N4150
Diotec Semiconductor
DIODE GEN PURP 50V 300MA DO35
BAT1704E6583HTSA1
BAT1704E6583HTSA1
Infineon Technologies
BAT17 - RF MIXER AND DETECTOR SC
RS1KL R3G
RS1KL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
S1D-E3/5AT
S1D-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AC
UPS5819/TR13
UPS5819/TR13
Microchip Technology
DIODE SCHOTTKY 40V 1A POWERMITE
VS-10ETF10STRL-M3
VS-10ETF10STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 10A D2PAK
MBR7520
MBR7520
GeneSiC Semiconductor
DIODE SCHOTTKY 20V 75A DO5
R7001005XXUA
R7001005XXUA
Powerex Inc.
DIODE GEN PURP 1KV 550A DO200
D6015L52
D6015L52
Littelfuse Inc.
DIODE GEN PURP 600V 9.5A TO220
RGP10G-6038M3/73
RGP10G-6038M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
SS13L MHG
SS13L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
Вас также может заинтересовать
SMBJ13CAH
SMBJ13CAH
Taiwan Semiconductor Corporation
TVS DIODE 13VWM 21.5VC DO214AA
P4KE250CAH
P4KE250CAH
Taiwan Semiconductor Corporation
TVS DIODE 214VWM 344VC DO204AL
BZW04-102B R1G
BZW04-102B R1G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO204AL
BZW04-20B A0G
BZW04-20B A0G
Taiwan Semiconductor Corporation
TVS DIODE 20.5VWM 33.2VC DO204AL
1.5KE160A A0G
1.5KE160A A0G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO201
PGSMAJ11AHR3G
PGSMAJ11AHR3G
Taiwan Semiconductor Corporation
TVS DIODE 11VWM 18.2VC DO214AC
1.5KE7.5CAH
1.5KE7.5CAH
Taiwan Semiconductor Corporation
TVS 1500W 7.5V 5% BIDIR DO-201
HS1KLW RVG
HS1KLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123W
RSFAL MQG
RSFAL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
SF16G A0G
SF16G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BZT52C33-G RHG
BZT52C33-G RHG
Taiwan Semiconductor Corporation
DIODE ZENER 33V 350MW SOD123
TSM4NB65CI C0G
TSM4NB65CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 4A ITO220AB