TSM2N100CH C5G

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See Product Specifications

Mfr. #:

TSM2N100CH C5G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 1000V 1.85A TO251

Упаковка:

Tube

Datasheet:

TSM2N100CH C5G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM2N100CH C5G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:	d40884e8cc196b4a1ee48cd08e753ea0
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	645aa2c308d7be5e469a812001f57cad
Vgs(th) (Max) @ Id:	6d0aae6453472371e17605a92ab5e6b7
Gate Charge (Qg) (Max) @ Vgs:	988fe98cb9f26fb087a3d0d542dc4408
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	d2f2dd3214f481645a477ab2a2b88f58
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3f7809d35872f764e8723f2f560517ed
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	54e97b06ca67f0676121b669811db9d1