TSM60NB190CM2 RNG

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Mfr. #:

TSM60NB190CM2 RNG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 18A TO263

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM60NB190CM2 RNG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM60NB190CM2 RNG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	066e0bb89d610303369c0ca2b47f7252
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	13f66792223bd70ca989e966ed8724b1
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	bb76162d41a5892918594518b268849a
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	c98cb1a2d743a8f45cfb67794b26de45
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bf3b1ea66e0449b3460eea04f3fa5dc9
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	9d9ff85da24edaaec8cba4083900a29e
Package / Case:	99446f4470b43888d0c78d7d2cdfc956

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Stock:

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