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See Product Specifications
| номер части: | 2SA1013-O,T6MIBF(J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | e61c2e8e49eca0e4942ddb2b339c10b0 |
| Voltage - Collector Emitter Breakdown (Max): | fbaf3c72fa8f43a3cedb18069593088d |
| Vce Saturation (Max) @ Ib, Ic: | e661b1fbd0fe7d3b510082e669ede708 |
| Current - Collector Cutoff (Max): | edb6b56e8e88a4e081c3366a9258a9e6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b2bf9365b34a626c46e8453b043f14e1 |
| Power - Max: | ce95244fd777c029cd7ce2060d88b39f |
| Frequency - Transition: | 23c561b9207b2f8bb732bc431d799515 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | c6fff1f3482bcfeff7d71309b8b61675 |
