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See Product Specifications
| номер части: | 2SA1382,T6MIBF(J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 00d9f98efc560ef2b894fe86c875a453 |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Vce Saturation (Max) @ Ib, Ic: | 93dc81e03c8ccdc4cd6f93ef7420c527 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | fea677ef198e64185f2ab2bd18ddcd74 |
| Power - Max: | ce95244fd777c029cd7ce2060d88b39f |
| Frequency - Transition: | 82077f49fa08975de052f99925d561d1 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | f7c8d4d17e5dc0b86a78dab297550bd9 |
