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See Product Specifications
| номер части: | 2SA1837,HFEMBJF(J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | e61c2e8e49eca0e4942ddb2b339c10b0 |
| Voltage - Collector Emitter Breakdown (Max): | 805b0aa5886f6ce11678c4a7200a8a0b |
| Vce Saturation (Max) @ Ib, Ic: | e661b1fbd0fe7d3b510082e669ede708 |
| Current - Collector Cutoff (Max): | edb6b56e8e88a4e081c3366a9258a9e6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 6dde7d40e2aa2b3cf29f65f5ce1f6187 |
| Power - Max: | b8a311ed3f21d724b699490a1101fe1b |
| Frequency - Transition: | 9ff4e955e5d870bbd44af73b0a21aadb |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
| Supplier Device Package: | 2dd8b787e28aa6ef43cc949cca56403f |
