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| номер части: | TK60D08J1(Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 127321faf7ab6033447f8457edc41d44 |
| Current - Continuous Drain (Id) @ 25°C: | 96cd7767f38099df4a6c066b3b4a102d |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 510f7ea12c08ab97b511af405bf22e09 |
| Vgs(th) (Max) @ Id: | e27cb9a9021a7cc3970301d6fa06979f |
| Gate Charge (Qg) (Max) @ Vgs: | d044678719314f1a9ba4624d7a76c577 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | ae03956bb4c5c43ece725b6ceb38dd1c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | e5511f6cedc0c07c4c7e079460a165c6 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 1c0d65007209dd536477915624195d4c |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |