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See Product Specifications
| номер части: | 2SA1930(LBS2MATQ,M |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 00d9f98efc560ef2b894fe86c875a453 |
| Voltage - Collector Emitter Breakdown (Max): | 9f9949aaed108db413b5e1e2e0fb7d73 |
| Vce Saturation (Max) @ Ib, Ic: | 846368b1e23e0c5719b1202f48136bb6 |
| Current - Collector Cutoff (Max): | 87dc233f4865cfe479ff8c624df14793 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 6dde7d40e2aa2b3cf29f65f5ce1f6187 |
| Power - Max: | b8a311ed3f21d724b699490a1101fe1b |
| Frequency - Transition: | 1110489901da9a699e8cd4e34d4b2c5e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
| Supplier Device Package: | 2dd8b787e28aa6ef43cc949cca56403f |
