TPCC8067-H,LQ(S

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See Product Specifications

Mfr. #:

TPCC8067-H,LQ(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 9A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCC8067-H,LQ(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCC8067-H,LQ(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	8eb8529018c5d32af4812ca4c4cabfa9
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	3fa920bc034f77577a10a1292a332d95
Vgs(th) (Max) @ Id:	21e81f1947254f4df5fa01fc08560fce
Gate Charge (Qg) (Max) @ Vgs:	cd5b4d19c60f0a942c8da6b39ef675fa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7b764f7e60d3adefdc3a2b14a88f6c75
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	eef0dc993807420c657fd6caaff08a63
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9