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See Product Specifications
| номер части: | 2SC5819(TE12L,ZF) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Box |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 9f6e80dd351494d2db798d784d9b37ed |
| Voltage - Collector Emitter Breakdown (Max): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Vce Saturation (Max) @ Ib, Ic: | 1df38680a05201d91acb3ced88bd93d0 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 72c782d63df894f4e1c77df180aab0c3 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 80047cf912aa748ae51ce6180b581cf9 |
| Supplier Device Package: | 9be79cc75480f14b1c50110791202233 |
