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See Product Specifications
| номер части: | 2SD2695,T6F(M |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 00d9f98efc560ef2b894fe86c875a453 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | 3f568900f4ce71d2885252920c86664c |
| Current - Collector Cutoff (Max): | 441b7615d074155ae02efbc6b5db17dd |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 494035f95dd2974014d74ae3546679ca |
| Power - Max: | ce95244fd777c029cd7ce2060d88b39f |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | f7c8d4d17e5dc0b86a78dab297550bd9 |
