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See Product Specifications
| номер части: | GT10G131(TE12L,Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - IGBTs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| IGBT Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Voltage - Collector Emitter Breakdown (Max): | a51e6c3b115ead349deb13cbf5a43f23 |
| Current - Collector (Ic) (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Pulsed (Icm): | 63d19bd379a172e83028b5a9b57fac7b |
| Vce(on) (Max) @ Vge, Ic: | 40764578e45288487d1f4c5c5e89bfab |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Switching Energy: | 336d5ebc5436534e61d16e63ddfca327 |
| Input Type: | eb6d8ae6f20283755b339c0dc273988b |
| Gate Charge: | 336d5ebc5436534e61d16e63ddfca327 |
| Td (on/off) @ 25°C: | 79b5b61a6b34196331c2bb020684743c |
| Test Condition: | 336d5ebc5436534e61d16e63ddfca327 |
| Reverse Recovery Time (trr): | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 360db61c20c455ecac5e92080f13f3cb |
| Supplier Device Package: | 18462b8273698d51534a6242e89a9e0a |
