GT10G131(TE12L,Q)

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See Product Specifications

Mfr. #:

GT10G131(TE12L,Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 400V 1W 8-SOIC

Упаковка:

Tape & Reel (TR)

Datasheet:

GT10G131(TE12L,Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT10G131(TE12L,Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	a51e6c3b115ead349deb13cbf5a43f23
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Current - Collector Pulsed (Icm):	63d19bd379a172e83028b5a9b57fac7b
Vce(on) (Max) @ Vge, Ic:	40764578e45288487d1f4c5c5e89bfab
Power - Max:	d6562c2ec32aee71526d8e2abf944399
Switching Energy:	336d5ebc5436534e61d16e63ddfca327
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	79b5b61a6b34196331c2bb020684743c
Test Condition:	336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	360db61c20c455ecac5e92080f13f3cb
Supplier Device Package:	18462b8273698d51534a6242e89a9e0a

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