2SJ380(F)

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See Product Specifications

Mfr. #:

2SJ380(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 100V 12A TO220NIS

Упаковка:

Tube

Datasheet:

2SJ380(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SJ380(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	4c0b4a109ef151efed19ed2ecd2c705c
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	1969d6a5719238554411aa67c6a1e5a8
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	46c8367c7ae984e8425d13016b5a49a0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	71fbc5583c0ebd33de81061dc2390256
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2dd8b787e28aa6ef43cc949cca56403f
Package / Case:	a02e0d1a928de3366340ceae094aecd8