2SJ668(TE16L1,NQ)

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See Product Specifications

Mfr. #:

2SJ668(TE16L1,NQ)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CHANNEL 60V 5A PW-MOLD

Упаковка:

Tape & Reel (TR)

Datasheet:

2SJ668(TE16L1,NQ) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SJ668(TE16L1,NQ)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	d59d0f233fe79879c037a2476500de6f
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	a6f1a061d42140d9ebe0c5ce6e356ab6
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	24d98632913ac255605ed1e0e3f65dae
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	30f9b88fd4b4cd0c45fa6701c81d377a
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	13a5779ced06888106a2acdcd2b95b6f
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95