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See Product Specifications
| номер части: | 2SJ668(TE16L1,NQ) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | d59d0f233fe79879c037a2476500de6f |
| Drive Voltage (Max Rds On, Min Rds On): | f74f85d709bcbb2da5806f0ce2ab05c0 |
| Rds On (Max) @ Id, Vgs: | a6f1a061d42140d9ebe0c5ce6e356ab6 |
| Vgs(th) (Max) @ Id: | 25509f2d81b84ad0de9368a2b900ad19 |
| Gate Charge (Qg) (Max) @ Vgs: | b8a0640fe9525616e9f66bccd7456bd2 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 24d98632913ac255605ed1e0e3f65dae |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 30f9b88fd4b4cd0c45fa6701c81d377a |
| Operating Temperature: | 9ba6558c95ad6e5d701d599c4dbbddd6 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 13a5779ced06888106a2acdcd2b95b6f |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
