2SK1119(F)

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See Product Specifications

Mfr. #:

2SK1119(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 1000V 4A TO220AB

Упаковка:

Tube

Datasheet:

2SK1119(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK1119(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:	0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	237ba2f0385ba63656355f943e8aeeaf
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	89853fdd6ed2eb1978d2d551614252a1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4d0decbd336e7edcc845e4c9224e2e3a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9b3b590b14408ced9e56cc56696084a1
Package / Case:	46bb638de2ea693de650d7f1c3115468