2SK2009TE85LF

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Mfr. #:

2SK2009TE85LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 200MA SC59-3

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK2009TE85LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2009TE85LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	6753131b43c81d45a78a55a58477564b
Drive Voltage (Max Rds On, Min Rds On):	68394c60d967df6378a00b61889333ac
Rds On (Max) @ Id, Vgs:	3131f32471183c7d87f9fabe26da2928
Vgs(th) (Max) @ Id:	fc583405b312476520e35f80780a2ebe
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	5bf23abe7faf3a833489e3becfab3ee5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b36da8a5889e432ae216a8f151101542
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	5bef184a14b6fd208581e8bdc5f40a2e
Package / Case:	51bf93173785f0f3fc2d8b70cf119689