2SK2376(Q)

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See Product Specifications

Mfr. #:

2SK2376(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 45A TO220FL

Упаковка:

Tube

Datasheet:

2SK2376(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2376(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	6e542846a04d1b959ff8a0950ca0905a
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	ee412bb747dc72183644f2dca2d4e622
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	144ba38dffb4af9355ddf437d4333409
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	15ca603807c6cc08bd9e7a35ea8ad69d
Package / Case:	e411ac6d5c82f36be8edc4dc487fa9fe