2SK2845(TE16L1,Q)

Images are for reference only
See Product Specifications

Mfr. #:

2SK2845(TE16L1,Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 900V 1A DP

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK2845(TE16L1,Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2845(TE16L1,Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2a1f3211ab99a82370cd2fe30f33267c
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	c77d5a083a2945ea8c6864ddf74b6f4e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	13a5779ced06888106a2acdcd2b95b6f
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95