2SK2963(TE12L,F)

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See Product Specifications

Mfr. #:

2SK2963(TE12L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 1A PW-MINI

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK2963(TE12L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2963(TE12L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	a47edea3aa1d6f1c712b543123c477a2
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	630bbdc3e912940390d8c264021428b8
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9c4aaa92dd527657fb57f42a6c478252
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	9be79cc75480f14b1c50110791202233
Package / Case:	80047cf912aa748ae51ce6180b581cf9