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See Product Specifications
| номер части: | 2SK2967(F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tray |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | c5cbb7b66561ae3dbbdcebae7b0fa3f9 |
| Current - Continuous Drain (Id) @ 25°C: | 0563dec0a7488306d232b9f76bb0fb19 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | f5b3242460e8d94a05007abf972c5eee |
| Vgs(th) (Max) @ Id: | 92e41164c30579f3defe30c91bbd1c8d |
| Gate Charge (Qg) (Max) @ Vgs: | 48181fc00b4a2d6a2f4c755721c21084 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4149c799c674010478b62d7904e8dcdd |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 3b4979fdef3ecbb1da8880119fdf6552 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 802becb26be6cafacf181bb527af5311 |
| Package / Case: | a37ad9863329afbf5b7bab5645143153 |
