2SK3313(Q)

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See Product Specifications

Mfr. #:

2SK3313(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 500V 12A TO220NIS

Упаковка:

Bulk

Datasheet:

2SK3313(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3313(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53acc560d6ddad5708f13429566dcdb7
Current - Continuous Drain (Id) @ 25°C:	45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	83476966520fdae6a856e6aaca9c9606
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	0f6138812f9ed4814918fa97e4fa176e
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	664a2aea929edb63e64ba562f07714a1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2dd8b787e28aa6ef43cc949cca56403f
Package / Case:	a02e0d1a928de3366340ceae094aecd8