GT30J121(Q)

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See Product Specifications

Mfr. #:

GT30J121(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 600V 30A 170W TO3PN

Упаковка:

Tube

Datasheet:

GT30J121(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT30J121(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):	e5e40f3fe57770f170a10089997a057e
Current - Collector Pulsed (Icm):	4c7be7db0ed1160a2dfac6e29929b43d
Vce(on) (Max) @ Vge, Ic:	84a097e4595df692b660ebc77e8e7a0b
Power - Max:	acad63a78b1890ca38df696b64901f58
Switching Energy:	a33e3c04e6cb5d086b2645e5aa267994
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	212c6610836631ce77e729b4edba6c18
Test Condition:	a5c5147fce5491350e77c4238231c4cf
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	a37ad9863329afbf5b7bab5645143153
Supplier Device Package:	802becb26be6cafacf181bb527af5311