GT30N135SRA,S1E

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See Product Specifications

Mfr. #:

GT30N135SRA,S1E

Mfr.:

Toshiba Semiconductor and Storage

Описание:

D-IGBT TO-247 VCES=1350V IC=30A

Упаковка:

Tube

Datasheet:

GT30N135SRA,S1E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT30N135SRA,S1E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	7bea4b6d3fd0ae73d2f5ecabf98ee369
Current - Collector (Ic) (Max):	4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):	4db308cc7032b73099a49fc453f78340
Vce(on) (Max) @ Vge, Ic:	ebe4f38979fb11a91bd66ca8082dcb45
Power - Max:	e3658ea5929d431b3bc712f0172a8c42
Switching Energy:	843910e86a97bfc3abca1ad9f72e36d5
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	145a44fd6e74440520400358d11210c0
Td (on/off) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Test Condition:	c9db39dcc431a321e76c6821f6fd6e1a
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:	566bc0f44c33782e0104763798b071ab