HN1B04FE-GR,LXHF

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Mfr. #:

HN1B04FE-GR,LXHF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

AUTO AEC-Q PNP + NPN TR VCEO:-50

Упаковка:

Tape & Reel (TR)

Datasheet:

HN1B04FE-GR,LXHF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	HN1B04FE-GR,LXHF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	18420a08ca0d1dff9beb448983a0bb6b
Current - Collector (Ic) (Max):	fc92dd3b69ad1d37d6fd6bb30e37477e
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Vce Saturation (Max) @ Ib, Ic:	fc6cad09cb142ace9f2a7435e1684910
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
DC Current Gain (hFE) (Min) @ Ic, Vce:	5e0023d662987c41faa668dfb4973fbe
Power - Max:	c4a759f95e24e7e8bc893d7baf9d09b4
Frequency - Transition:	20e3a666c0f38875bdf9ce0635b95246
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	86215ac6c939e87a911385cbe7e7abfb
Supplier Device Package:	a341a0ec0c824fdb4da2f951178d486b