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See Product Specifications
| номер части: | HN4B04J(TE85L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 18420a08ca0d1dff9beb448983a0bb6b |
| Current - Collector (Ic) (Max): | 5e40585f7a94ee7a97fea0a1b3e43127 |
| Voltage - Collector Emitter Breakdown (Max): | 9ec92e92d0efca44e7ef022a61c49068 |
| Vce Saturation (Max) @ Ib, Ic: | cb809df1a986e6a2517d344424539ae2 |
| Current - Collector Cutoff (Max): | 172db04a50a1ace1828c4f7ae6dae515 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 84c550b3bc778aae639a123bb2c56b40 |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Frequency - Transition: | 1110489901da9a699e8cd4e34d4b2c5e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 25ae2b3764e46657eb65e9234be54ea6 |
| Supplier Device Package: | d6e2a1ed38669c6c0cdbe557b557cab7 |
