MT3S20P(TE12L,F)

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See Product Specifications

Mfr. #:

MT3S20P(TE12L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

RF TRANS NPN 12V 7GHZ PW-MINI

Упаковка:

Tape & Reel (TR)

Datasheet:

MT3S20P(TE12L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	MT3S20P(TE12L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	ffb6e22cfcfa6ff4ab883374e06309ac
Frequency - Transition:	48f743ef4061bd515d9f0b04593ea344
Noise Figure (dB Typ @ f):	e7ce6cc723449a24e5db69b018ece698
Gain:	f4164014566651067d07172fe5fd7943
Power - Max:	04cf225fcad453787388c34f14bb483e
DC Current Gain (hFE) (Min) @ Ic, Vce:	07fc84f1f4b2b4a3b48eb295018cfcf6
Current - Collector (Ic) (Max):	f0574f50621397803f61d5425704a2c3
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	80047cf912aa748ae51ce6180b581cf9
Supplier Device Package:	9be79cc75480f14b1c50110791202233