TK6Q60W,S1VQ

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Mfr. #:

TK6Q60W,S1VQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 6.2A IPAK

Упаковка:

Tube

Datasheet:

TK6Q60W,S1VQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK6Q60W,S1VQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	6d0b13a6679111c9278b3834a4be13d1
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	60c376994e8d0602d6b7b51c8d6f6bc7
Vgs(th) (Max) @ Id:	1fab8cd9e9607fac0bd6f943ecbdce5a
Gate Charge (Qg) (Max) @ Vgs:	db83709cc1aa640e30cdddd177064057
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	dc12758fac92f7bbef947d010013080a
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	d6fc0ca06a01a70da20a6b2b00f6ba27
Package / Case:	f05f3b828db9b3466aca24456db9c84e