RN1111ACT(TPL3)

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Mfr. #:

RN1111ACT(TPL3)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS PREBIAS NPN 50V 0.08A CST3

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1111ACT(TPL3) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1111ACT(TPL3)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	48a17c98273ebfca8cd4f0b9d84ba7bc
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	62be411690721884738e929c9aa26f03
Resistor - Emitter Base (R2):	336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:	a389bd1a8981022da1a4da644def3bcd
Vce Saturation (Max) @ Ib, Ic:	e61ff4fa353c3aa540d0601a110c83ce
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	0ac361d2907a7f247850300cb12747c5
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	712561badb0e7c3e9ec18eb67d158a45
Supplier Device Package:	917d74eac8837850506d788d0fc4ad55