RN2313,LF

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See Product Specifications

Mfr. #:

RN2313,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

PB-F BIAS RESISTOR BUILT-IN TRAN

Упаковка:

Tape & Reel (TR)

Datasheet:

RN2313,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN2313,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	336d5ebc5436534e61d16e63ddfca327
Resistor - Base (R1):	336d5ebc5436534e61d16e63ddfca327
Resistor - Emitter Base (R2):	336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:	336d5ebc5436534e61d16e63ddfca327
Vce Saturation (Max) @ Ib, Ic:	336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):	336d5ebc5436534e61d16e63ddfca327
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327

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