TK100E06N1,S1X

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See Product Specifications

Mfr. #:

TK100E06N1,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N CH 60V 100A TO-220

Упаковка:

Tube

Datasheet:

TK100E06N1,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK100E06N1,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	626760822211ebd4c2dcfd72769f5d49
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	dfe79b0df0a04c424f076385311df214
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	8c83d41f928a4a47a33c628598aa2128
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4802fda7f79d651712b1bb8f87108044
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b2180e6075c7c9cf54c503b2d8883b80
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468