TK31V60W5,LVQ

Images are for reference only
See Product Specifications

Mfr. #:

TK31V60W5,LVQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 30.8A 4DFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TK31V60W5,LVQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK31V60W5,LVQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	910d399bc224e1dce1647498530a1b50
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d6bad76b6753537be8d05a7ba22619f3
Vgs(th) (Max) @ Id:	8fcceb149c618716adfe13f5f239058e
Gate Charge (Qg) (Max) @ Vgs:	3a4a7dc7b45d7318558d72a40a6dd8b8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	152fd1977c7e1eeb2dc30e99c50b4204
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	dfaa8907146d887d4477810fd4d469f7
Operating Temperature:	80db9bd8d53d8cfd57147fd16a7f6dbd
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	de08c7172b72eb2a26dd3542a0955a51
Package / Case:	0f74eb33751edee13cbe0e1b29a71304

In Stock: 2015

Stock:

2015 Can Ship Immediately