TPC6006-H(TE85L,F)

Images are for reference only
See Product Specifications

Mfr. #:

TPC6006-H(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 40V 3.9A VS-6

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC6006-H(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC6006-H(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	fcab600fa961ddac86996e261d1c6a9d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	6c8c9dd5f344de9a69466e223535e22f
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	6562d483b9a4ff2c13bdd9d5e8f538f5
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	664811485314760fd3773968dddbc8a0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b4a589eaee5d79dd61727540c38189e5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	af44173cc41050ce2840fd9225626a76
Package / Case:	0be095bf904b063006f66328288b68f9