SSM3K35MFV,L3F

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See Product Specifications

Mfr. #:

SSM3K35MFV,L3F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 20V 180MA VESM

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3K35MFV,L3F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3K35MFV,L3F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	6551e8da8db600aa648edb61c62919dc
Drive Voltage (Max Rds On, Min Rds On):	4ac6e717d1a6b17ced3bd74659167035
Rds On (Max) @ Id, Vgs:	cb8f9502d6a9c6018445df0f01fdf93a
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	83823692d72e235f58b3b473a2e43edd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b076f3636e454aebe9bc375302480bb7
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f0dc9e2bb67aea25f3429950e6478e66
Package / Case:	304e247e63e29f16be170ede2fd6775d