SSM3K376R,LF

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See Product Specifications

Mfr. #:

SSM3K376R,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 4A SOT23F

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3K376R,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3K376R,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	159f80750e549bdb22fc68270b013a5d
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	2dbc919af3cf10bad6aa6c037c47f4f8
Vgs (Max):	0266d9163d51a5f7c3780149b6391b40
Input Capacitance (Ciss) (Max) @ Vds:	a14a0f0be66bb6d5449ffa47b7e72f15
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	6f7ddd1a3871496db093aff0b170878f
Package / Case:	288ec396e7075d0ccc606941dafc2b09