SSM6J216FE,LF

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See Product Specifications

Mfr. #:

SSM6J216FE,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CHANNEL 12V 4.8A ES6

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6J216FE,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6J216FE,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:	dc3c05cba689ee7953a0d1653818adfd
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	3e1a7d14657bd2d691ad0ce82f584954
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	5674e90f897206c92b0e79f5c6d4ebc8
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	01a6d8da25b007ff5023cdc925c34eaf
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b4a589eaee5d79dd61727540c38189e5
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	a341a0ec0c824fdb4da2f951178d486b
Package / Case:	86215ac6c939e87a911385cbe7e7abfb