SSM6J507NU,LF

Images are for reference only
See Product Specifications

Mfr. #:

SSM6J507NU,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 10A 6UDFNB

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6J507NU,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6J507NU,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	ca7d7323d76db03b8ae60f6f2be1c671
Vgs(th) (Max) @ Id:	17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:	0f4683163140f21ef65daea3bf728161
Vgs (Max):	3c81c5d94681cbb93e31f6893f8db947
Input Capacitance (Ciss) (Max) @ Vds:	79581674ceed958415cff78fb6c278f6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6ceb14a6a136f3b1b5228f4ed05f6683
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	02573af3e701c060a8f85e7937205613
Package / Case:	5ca2465698459a103daf1ec0ae24ba5d