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See Product Specifications
| номер части: | TPC8018-H(TE12LQM) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 66ab69b459c614644a63dc0c3e22ff0d |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 06b7baacffb6005bdd4359d85cf89913 |
| Vgs(th) (Max) @ Id: | e27cb9a9021a7cc3970301d6fa06979f |
| Gate Charge (Qg) (Max) @ Vgs: | 9f1b4cf224c82abf492d26a94856e61a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 5ac8e5aaf7e213d73da58ddbfdcbe409 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 4c6a955db65e87d580766aee735f1644 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 18462b8273698d51534a6242e89a9e0a |
| Package / Case: | 360db61c20c455ecac5e92080f13f3cb |
