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See Product Specifications
| номер части: | TJ10S04M3L(T6L1,NQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 52494cba539840e9393c9095a1421004 |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | a5cbf89631879e4daa7bdcf327b61200 |
| Vgs(th) (Max) @ Id: | 2da3540dbfa7d901b7d797a5001bb2e7 |
| Gate Charge (Qg) (Max) @ Vgs: | b662323f4246acd1b360f3b4faeeff60 |
| Vgs (Max): | 02cc895643c87c92ed1c8005e0d8d38d |
| Input Capacitance (Ciss) (Max) @ Vds: | ce9655ad959040e54dde8d322ebbcd66 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | bebc005e0f3f0e9ae4e4aa7f4c19c644 |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 0a914331c901d37ac7c2db598fa12b21 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
