TJ10S04M3L(T6L1,NQ

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Mfr. #:

TJ10S04M3L(T6L1,NQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 40V 10A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TJ10S04M3L(T6L1,NQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TJ10S04M3L(T6L1,NQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	a5cbf89631879e4daa7bdcf327b61200
Vgs(th) (Max) @ Id:	2da3540dbfa7d901b7d797a5001bb2e7
Gate Charge (Qg) (Max) @ Vgs:	b662323f4246acd1b360f3b4faeeff60
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	ce9655ad959040e54dde8d322ebbcd66
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bebc005e0f3f0e9ae4e4aa7f4c19c644
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95