TJ90S04M3L,LXHQ

Images are for reference only
See Product Specifications

Mfr. #:

TJ90S04M3L,LXHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 40V 90A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TJ90S04M3L,LXHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TJ90S04M3L,LXHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	a873c16e80a8c3db7fe2a325e779f94f
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e772450f387278cc307c52b8f6716fc6
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	79493b4e2bf8c4bce3ca363594bbc28e
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	6308ea5d9a798d6f521ffa7e287fb8fe
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	90f0bb11535d8d8a09a6832b4915536f
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95