TK10E60W,S1VX

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See Product Specifications

Mfr. #:

TK10E60W,S1VX

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 9.7A TO220

Упаковка:

Tube

Datasheet:

TK10E60W,S1VX Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK10E60W,S1VX
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	285c823632b91cba90fa8c498eed990b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	5ebdfa6364bfe58810eb6d0e4ca1291a
Vgs(th) (Max) @ Id:	e719cedd529add5f7abbad66f8abce5d
Gate Charge (Qg) (Max) @ Vgs:	0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	572c05ca463a6252732b48acbaa7ccd2
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468