TK110P10PL,RQ

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Mfr. #:

TK110P10PL,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

X35 PB-F POWER MOSFET TRANSISTOR

Упаковка:

Tape & Reel (TR)

Datasheet:

TK110P10PL,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK110P10PL,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	3bea801ada2019f6e4c9b4fd24faaa4c
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	7d4c1d0136ee8da096ae607a5a369a06
Vgs(th) (Max) @ Id:	283669614ace519f4b9c04b690e997d2
Gate Charge (Qg) (Max) @ Vgs:	bc58166896f73e30fff327343c82357f
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	47f4b56115f48d717b6a1ca8b425bb8b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fc68e31357073b0dee08946ec891c227
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95