TK12P60W,RVQ(S

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See Product Specifications

Mfr. #:

TK12P60W,RVQ(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 11.5A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK12P60W,RVQ(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK12P60W,RVQ(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	9b85b9b093651739436791dc0d0a4ee2
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d92c6155f59371c0a6179d1b32b6a63a
Vgs(th) (Max) @ Id:	97f96eb8bcbfa579e63c832922a37f4a
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	899c4e9c250679f79ab3e91422dbfe8d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95