TK16E60W,S1VX

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See Product Specifications

Mfr. #:

TK16E60W,S1VX

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 15.8A TO220

Упаковка:

Tube

Datasheet:

TK16E60W,S1VX Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK16E60W,S1VX
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	f94bf0476b2f092d17af9ffb73a2f193
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	cda29565b30740590ca8a816362ac36c
Vgs(th) (Max) @ Id:	76cb6b29d6c6359f04b8dd3dc8577dbd
Gate Charge (Qg) (Max) @ Vgs:	9f1b4cf224c82abf492d26a94856e61a
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0f61802a199edf5b9489c2c9ec7b7305
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	56585d83f707826d265fba1f54e2fd6a
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468