TK1R4F04PB,LXGQ

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Mfr. #:

TK1R4F04PB,LXGQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 40V 160A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

TK1R4F04PB,LXGQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK1R4F04PB,LXGQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	4cc4f68f7010d4ae6edbeba42e79d3ef
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	22ca755b7be92b4893ac610bab1ced85
Vgs(th) (Max) @ Id:	59779e26b372f7c39b04b4a96765c326
Gate Charge (Qg) (Max) @ Vgs:	64de9141c3cdbcdab6ad97b5fb791680
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	fb7b18d824332e1a6071cf2f7aa3bcc2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	02d8037fa50adfe9526ef8cc18fc73c2
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f7944d055bb3cc70853f272a8d27664f
Package / Case:	99446f4470b43888d0c78d7d2cdfc956