TK22E10N1,S1X

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See Product Specifications

Mfr. #:

TK22E10N1,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N CH 100V 52A TO220

Упаковка:

Tube

Datasheet:

TK22E10N1,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK22E10N1,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	2bd9e27f96715992415c6b64f7be465b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	4eed5bb58ca357163599912e276e8405
Vgs(th) (Max) @ Id:	42d3b5c6439fb1039d650e9d3c61dce6
Gate Charge (Qg) (Max) @ Vgs:	bc6ff13a46b13779fa5c2c7eaad150e9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	42b604951587af0ae202a2924cd6f800
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f01744b206dcc2ff656abffeb58f0284
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468