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See Product Specifications
| номер части: | TK2Q60D(Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 9b63fe166715207d51445c226ada9c46 |
| Current - Continuous Drain (Id) @ 25°C: | 49be2d3befbb5f287b3239b421243897 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 1fed66fb6785af0df451ab47f68dbca2 |
| Vgs(th) (Max) @ Id: | a08150ab78b1acb5838dbc11e244b833 |
| Gate Charge (Qg) (Max) @ Vgs: | 9c776809f0ec6511de1829648c094927 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 1fc9ee5a53facf079b586ce585b37835 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 4d11c3d72a44f4227b1e9af62cf6d238 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 7be745d195abbcb02fb906e1493a63a9 |
| Package / Case: | f05f3b828db9b3466aca24456db9c84e |
