TK31J60W5,S1VQ

Images are for reference only
See Product Specifications

Mfr. #:

TK31J60W5,S1VQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 30.8A TO3P

Упаковка:

Tube

Datasheet:

TK31J60W5,S1VQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK31J60W5,S1VQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	910d399bc224e1dce1647498530a1b50
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	fe2325f69e695ef9e22e78fc74cca252
Vgs(th) (Max) @ Id:	978fc1f7b11037dda288248be55c2fa9
Gate Charge (Qg) (Max) @ Vgs:	3a4a7dc7b45d7318558d72a40a6dd8b8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	152fd1977c7e1eeb2dc30e99c50b4204
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	eedcf883fa5cf18823fd32a2edeed98b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153