TK3R1P04PL,RQ

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Mfr. #:

TK3R1P04PL,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CHANNEL 40V 58A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK3R1P04PL,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK3R1P04PL,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	036d2b0bba9e9111dfcfbe4715924567
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	4a620e7a92adb2aa58e8bec1a9ebf2fa
Vgs(th) (Max) @ Id:	ee60e58812996e099c063df7b54381b7
Gate Charge (Qg) (Max) @ Vgs:	89853fdd6ed2eb1978d2d551614252a1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7c3d2d7c36e8e1e28862df91c64b1962
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c50b79aaa5d7fb9170b358088ac8d27b
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95