TK40S06N1L,LQ

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See Product Specifications

Mfr. #:

TK40S06N1L,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 40A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK40S06N1L,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK40S06N1L,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	e50dae7122d252f8a7317c11068ffb56
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	9c28f189cdb89eee2a4abdc1bee11da1
Vgs(th) (Max) @ Id:	f1e6331c3f85a45c7fac61b038bc3a84
Gate Charge (Qg) (Max) @ Vgs:	3c309df0dab075d5fb4f85fd7f1eb952
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f10c95142301e441e988732b6749e550
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	af914ee5b679b9c9d1f6615d1a1fa2a7
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95