TPN22006NH,LQ

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See Product Specifications

Mfr. #:

TPN22006NH,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 9A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN22006NH,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN22006NH,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	8eb8529018c5d32af4812ca4c4cabfa9
Drive Voltage (Max Rds On, Min Rds On):	72187889bca1e415bd77d74221276588
Rds On (Max) @ Id, Vgs:	fbfdae908d261090e803a3061e6fdf27
Vgs(th) (Max) @ Id:	b3c2b77f4000524b1efc625ac9e32555
Gate Charge (Qg) (Max) @ Vgs:	db83709cc1aa640e30cdddd177064057
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f8a13c5bf96034204476ac0fc8ec5135
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4e2a30aeab179a1f92003eae9a55c34c
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cd5ffa77c25e09aa386bda2b04d3b368
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9